Presentation title: What brings diamond compared to wide bandgap materials in power semiconductor devices?
Nicolas Rouger PhD, is a research scientist at the French National Centre for Scientific Research (CNRS) and Laplace Lab in Toulouse France. Since 2020, he is the power converter research group leader at Laplace Lab, which is composed by 38 group members and contributes from power semiconductor devices to multi cellular high power converters.
His field of interest is power semiconductor devices based on widebandgap (SiC, GaN) and ultrawidebandgap materials (Diamond), from design of power semiconductor devices with outstanding performances, to their implementation in the next generation of power converters, including dedicated gate drivers. Scholar: https://scholar.google.fr/citations?user=K1uNl9AAAAAJ(opens in new tab/window)